MIT Powers the Future: 3D GaN Chips Redefine Innovation

MIT revealed a scalable way to integrate gallium-nitride transistors onto silicon for faster electronics. Alongside, an MIT alum-led startup rolled out a portable device capable of measuring protein concentrations in minutes—potentially revolutionizing drug development.

🔹 New 3D Chips: GaN Transistors Bonded onto Silicon

• What was done: MIT researchers developed a novel fabrication process that integrates miniature gallium-nitride (GaN) transistors—called “dielets”—onto standard silicon CMOS chips using low-temperature copper-to-copper bonding.

  
  

• Why it matters: This hybrid chip combines the speed and power efficiency of GaN with the scalability and affordability of silicon. Notably, it:

  • Significantly boosts performance in applications like wireless power amplifiers (e.g., in phones or data centers),

  • Improves energy efficiency and thermal management,

  • Can be manufactured using existing semiconductor fabs without costly infrastructure changes.

    
    

• Future potential: This breakthrough could accelerate advancement in next-gen communications, AI hardware, and even quantum computing, as GaN performs better at cryogenic temperatures.

source: MIT News